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AOD4104 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free*
TO-252 D-PAK
Features
VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m (VGS = 20V) RDS(ON) < 4.5m (VGS = 12V) RDS(ON) < 5.4m (VGS = 10V) 100% UIS Tested! 100% Rg Tested!
Top View D
Bottom View D
G S S G S G
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C TC=25C
G
Maximum 25 30 75 75 200 30 135 100 50 2.5 1.6 -55 to 175
Units V V A A mJ W W C Max 20 50 1.5 Units C/W C/W C/W
VGS TC=100C ID IDM IAR EAR PD PDSM
Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B
Symbol RJA RJC
Typ 16 40 1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS= 30V VDS=VGS ID=250A VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 200 3 4.2 3.7 4.5 75 0.7 1 55 2100 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 850 400 0.35 40 VGS=10V, VDS=12.5V, I D=20A 33 11 14 12 VGS=10V, VDS=12.5V, RL=0.68, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 19 15 8.5 42 34 1 50 2400 3.6 5 4.5 5.4 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 3 Min 25 0.005 1 5 100 4 Typ Max Units V A nA V A
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The SOA A curve provides a single pulse rating. I. The maximum current rating is limited by bond-wires. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev1:Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 20V 160 12V 10V ID(A) VGS=8V 80 80 100 VDS=5V
120
60
ID(A)
40
125C
40
20
25C
0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5
0 3 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics 4 8
5.0 4.5 RDS(ON) (m ) 4.0 3.5 3.0 VGS=20V 2.5 2.0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 ID=20A 12 VGS=12V VGS=10V Normalized On-Resistance
1.4 ID=20A 1.2 VGS=10V 1 VGS=12V VGS=20V VGS=12V VGS=10V
0.8 VGS=20V 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.0E+00
10 RDS(ON) (m ) IS (A) 1.0E-01 1.0E-02 25C 1.0E-03
8
TC=100C TA=25C 125C
6 25C 4
-55 to 175
1.0E-04 1.0E-05
2 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
0.2
0.4
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 VDS=12.5V ID=20A Capacitance (pF) 3000 Ciss 2500 2000 1500 1000 Crss 500 0 0 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
16 VGS (Volts) 12
8 4
Coss
1000.0 RDS(ON) limited 100.0 ID (Amps) 10s 100 10.0 TJ(Max)=175C TC=25C 1.0 0.01 DC 1m Power (W) 200 TJ(Max)=175C TC=25C 150
100
50
0.1
1 VDS (Volts)
10
100
0 0.0001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 D=Ton/T TJ,PK =Tc+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient Thermal Resistance
TC=100C TA=25C
0.1 PD
-55 to 175
Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current TA=25C 25C 60 40 20 0 0.00001 Power Dissipation (W) 0.001 80 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) 120
150C
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
80
100 80 Power (W) 0 25 50 75 100 125 150 175 60 40 20
Current rating ID(A)
60
40
20
0 T CASE (C) Figure 14: Current De-rating (Note B)
0 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 PD 0.01 Single Pulse 0.001 0.00001 D=Ton/T TJ,PK =TA+PDM.ZJA .RJA RJA =50C/W 0.001 0.01 0.1 1 Ton
T
0.0001
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
td(on) tr ton td(off) toff tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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